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Surface morphology and electronic structure of halogen etched InAs (111)

Identifieur interne : 001459 ( Main/Repository ); précédent : 001458; suivant : 001460

Surface morphology and electronic structure of halogen etched InAs (111)

Auteurs : RBID : Pascal:12-0262769

Descripteurs français

Pascal (Inist)
- Morphologie surface, Attaque chimique, Etat électronique surface, Microscopie électronique émission champ, Spectre Raman, Potentiel déformation, Courbure bande, Mode phonon, Surface libre, Facettage, Microscopie électronique balayage, Arséniure d'indium, InAs.

English descriptors

KwdEn :
- Band bending, Chemical etching, Deformation potential, Faceting, Field emission electron microscopy, Free surface, Indium arsenides, Phonon mode, Raman spectra, Scanning electron microscopy, Surface electron state, Surface morphology.

Abstract

The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H₂O, Br-methanol and I-ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {111} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

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Pascal:12-0262769

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<author><name sortKey="Eassa, N" uniqKey="Eassa N">N. Eassa</name>
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<author><name sortKey="Murape, D M" uniqKey="Murape D">D. M. Murape</name>
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<author><name sortKey="Betz, R" uniqKey="Betz R">R. Betz</name>
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<author><name sortKey="Neethling, J H" uniqKey="Neethling J">J. H. Neethling</name>
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<author><name sortKey="Botha, J R" uniqKey="Botha J">J. R. Botha</name>
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<term>Chemical etching</term>
<term>Deformation potential</term>
<term>Faceting</term>
<term>Field emission electron microscopy</term>
<term>Free surface</term>
<term>Indium arsenides</term>
<term>Phonon mode</term>
<term>Raman spectra</term>
<term>Scanning electron microscopy</term>
<term>Surface electron state</term>
<term>Surface morphology</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Morphologie surface</term>
<term>Attaque chimique</term>
<term>Etat électronique surface</term>
<term>Microscopie électronique émission champ</term>
<term>Spectre Raman</term>
<term>Potentiel déformation</term>
<term>Courbure bande</term>
<term>Mode phonon</term>
<term>Surface libre</term>
<term>Facettage</term>
<term>Microscopie électronique balayage</term>
<term>Arséniure d'indium</term>
<term>InAs</term>
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<front><div type="abstract" xml:lang="en">The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H<sub>2</sub>
O, Br-methanol and I-ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {111} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.</div>
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<fC01 i1="01" l="ENG"><s0>The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H<sub>2</sub>
O, Br-methanol and I-ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {111} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.</s0>
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Surface morphology and electronic structure of halogen etched InAs (111)

Surface morphology and electronic structure of halogen etched InAs (111)

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri